Ion bombardment effects on ZnO nanowires during plasma treatment

Applied Physics Letters

Volumn 93, Issue 3, 2008, Pages

  Ra, H W ^a   Choi, K S ^a   Ok, C W ^a   Jo, S Y ^a   Bai, K H ^b   Im, Y H ^a  

^a Chonbuk National University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CONCENTRATION (PROCESS); ELECTRIC PROPERTIES; ELECTRIC WIRE; INDUCTIVELY COUPLED PLASMA; IONS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NONMETALS; OXYGEN; OXYGEN VACANCIES; PHOTORESISTS; PLASMA APPLICATIONS; PLASMAS; SEMICONDUCTING ZINC COMPOUNDS; THRESHOLD LOGIC; ZINC ALLOYS; ZINC OXIDE;

AMERICAN INSTITUTE OF PHYSICS (AIP); CARRIER (CO); CONCENTRATION (COMPOSITION); COUPLED PLASMAS; ELECTRICAL (ELECTRONIC) PROPERTIES; INDIVIDUAL (PSS 544-7); NEGATIVE SHIFT; ORDERS-OF-MAGNITUDE; PLASMA TREATMENTS; THRESHOLD GATE VOLTAGE; ZNO NANOWIRE; ZNO NANOWIRES;

ION BOMBARDMENT;

EID: 48249088556     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2965109     Document Type: Article

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