Electronic band gap of Si/SiO2 quantum wells: Comparison of ab initio calculations and photoluminescence measurements

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 6, 2007, Pages 1500-1504

  Wagner, J M ^a,c   Seino, K ^a   Bechstedt, F ^a   Dymiati, A ^b   Mayer, J ^b   Rolver R ^b   Forst M ^b   Berghoff, B ^b   Spangenberg, B ^b   Kurz, H ^b  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ENERGY GAP; NANOCRYSTALLINE SILICON; PHOTOLUMINESCENCE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SILICA;

AB INITIO CALCULATIONS; AMORPHOUS SILICA; ELECTRONIC BAND GAP;

SEMICONDUCTOR QUANTUM WELLS;

EID: 36049013414     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2779040     Document Type: Article

References (32)

1. L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990).
2. L. Pavesi and D. J. Lockwood, Si Photonics, Topics in Applied Physics, Vol. 94 (Springer, Berlin, 2004).
3. M. A. Green, Mater. Sci. Eng., B 74, 118 (2000).
4. G. L. Araujo and A. Marti, Sol. Energy Mater. Sol. Cells 33, 213 (1994).
5. Z. H. Lu, D. J. Lockwood, and J.-M. Baribeau, Nature (London) 378, 258 (1995).
6. D. J. Lockwood, Z. H. Lu, and J.-M. Baribeau, Phys. Rev. Lett. 76, 539 (1996).
7. Y. Kanemitsu, M. Iiboshi, and T. Kushida, Appl. Phys. Lett. 76, 2200 (2000).
8. V. Vinciguerra, G. Franzo, F. Priolo, F. Iacona, and C. Spinella, J. Appl. Phys. 87, 8165 (2000).
9. M. Zacharias and P. Streitenberger, Phys. Rev. B 62, 8391 (2000).
10. E.-C. Cho, M. A. Green, J. Xia, R. Corkish, and A. Nikulin, J. Appl. Phys. 96, 3211 (2004).
11. R. Rölver, M. Först, O. Winkler, B. Spangenberg, and H. Kurz, J. Vac. Sci. Technol. A 24, 141 (2006).
12. H. Kageshima and K. Shiraishi, Surf. Sci. 380, 61 (1997).
13. A. Pasquarello, M. S. Hybertsen, and R. Car, Nature (London) 396, 58 (1998).
14. E. Degoli and G. Ossicini, Surf. Sci. 470, 32 (2000).
15. R. Rölver, S. Brunninghoff, M. Först, B. Spangenberg, and H. Kurz, J. Vac. Sci. Technol. B 23, 3214 (2005).
16. A. Gehring and S. Selberherr, IEEE Trans. Device Mater. Reliab. 4, 306 (2004).
17. Y. J. Song, M. R. Park, E. Guliants, and W. A. Anderson, Solar Energy Mater. Solar Cells 64, 225 (2000).
18. S. Ossicini et al., in Towards the First Silicon Laser, NATO Science Series II, Vol. 93, edited by L. Pavesi, S. Gaponenko, and L. Dal Negro (Kluwer, Dordrecht, 2003), p. 261.
19. A. Ourmazd, D. W. Taylor, J. A. Rentschler, and J. Bevk, Phys. Rev. Lett. 59, 213 (1987).
20. 2 and Its Interfaces, edited by S. T. Pantelides (Pergamon, New York, 1978), p. 333.
21. N. Tit and M. W. C. Dharma-Wardana, Phys. Lett. A 254, 233 (1999).
22. H. Kageshima and K. Shiraishi, Surf. Sci. 407, 133 (1998).
23. L. Tsetseris and S. T. Pantelides, Phys. Rev. B 70, 245320 (2004).
24. G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996);
25. Phys. Rev. B 54, 11169 (1996).
26. W. G. Aulbur, L. Jönsson, and J. W. Wilkins, Solid State Phys. 54, 1 (2000).
27. L. E. Ramos, J. Furthmüller, and F. Bechstedt, Phys. Rev. B 69, 085102 (2004).
28. K. Seino, J.-M. Wagner, and F. Bechstedt, Appl. Phys. Lett. 90, 253109 (2007).
29. T. Arguirov, T. Mchedlidze, M. Kittler, R. Rölver, B. Berghoff, M. Forst, and B. Spangenberg, Appl. Phys. Lett. 89, 053111 (2006).
30. G. Lucovsky, P. D. Richard, D. V. Tsu, S. Y. Lin, and R. J. Markunas, J. Vac. Sci. Technol. A 4, 681 (1986).
31. G. Lucovsky and J. C. Phillips, J. Vac. Sci. Technol. B 22, 2087 (2004).
32. L. He, T. Inokuma, Y. Kurata, and S. Hasegawa, J. Non-Cryst. Solids 185, 249 (1995).