On the bipolar resistive switching memory using TiN/Hf/HfO2Si MIS structure

IEEE Electron Device Letters

Volumn 34, Issue 3, 2013, Pages 414-416

  Wu, Yung Hsien ^a   Wouters, Dirk J ^b,c   Hendrickx, Paul ^b   Zhang, Leqi ^b,c   Chen, Yang Yin ^b,c   Goux, Ludovic ^b   Fantini, Andrea ^b   Groeseneken, Guido ^b,c   Jurczak, Malgorzata ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Endurance; Hf HfO2; HfSiOx; metal insulator semiconductor (MIS); resistive random access memory (RRAM); resistive switching mechanism; retention

Indexed keywords

HFSIOX; METAL-INSULATOR-SEMICONDUCTORS; RESISTIVE RANDOM ACCESS MEMORIES (RRAM); RESISTIVE SWITCHING MECHANISMS; RETENTION;

DURABILITY; MIS DEVICES; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; SILICON; SWITCHING CIRCUITS; SWITCHING SYSTEMS; TITANIUM NITRIDE;

MIM DEVICES;

EID: 84874667501     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2241726     Document Type: Article

References (14)

1. C. H. Cheng, P. C. Chen, Y. H. Wu, F. S. Yeh, and A. Chin, "Longendurance nanocrystal TiO2 resistive memory using a TaON buffer layer," IEEE Electron Device Lett., vol. 32, no. 12, pp. 1749-1751, Dec. 2011.
2. J. Shin, I. Kim, K. P. Biju, M. Jo, J. Park, J. Lee, S. Jung, W. Lee, S. Kim, S. Park, and H. Hwang, "TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application," J. Appl. Phys., vol. 109, no. 3, pp. 033712-1-033712-4, Feb. 2011.
3. M. C.Wu, Y.W. Lin,W. Y. Jang, C. H. Lin, and T. Y. Tseng, "Low-power and highly reliable multilevel operation in ZrO2 1T1R RRAM," IEEE Electron Device Lett., vol. 32, no. 8, pp. 1026-1028, Aug. 2011.
4. Q. Liu, S. Long, W. Wang, Q. Zuo, S. Zhang, J. Chen, and M. Liu, "Improvement of resistive switching properties in ZrO2-based RERAM with implanted Ti ions," IEEE Electron Device Lett., vol. 30, no. 12, pp. 1335-1337, Dec. 2009.
5. B. Govoreanu, G. S. Kar, Y. Y. Chen, V. Paraschiv, S. Kubicek, A. Fantini, I. P. Radu, L. Goux, S. Clima, R. Degraeve, N. Jossart, O. Richard, T.Vandeweyer, K. Seo, P. Hendrickx, G. Pourtois,H. Bender, L. Altimime, D. J. Wouters, J. A. Kittl, and M. Jurczak, "10 × 10 nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and lowenergy operation," in Proc. IEEE IEDM, 2011, pp. 31.6.1-31.6.4.
6. L. Goux, A. Fantini, G. Kar, Y. Y. Chen, N. Jossart, R. Degraeve, S. Clima, B. Govoreanu, G. Lorenzo, G. Pourtois, D. J. Wouters, J. A. Kittl, L. Altimime, and M. Jurczak, "Ultralow sub-500 nA operating current high-performance TiN \ Al2O3 \ HfO2 \ Hf \ TiN bipolar RRAM achieved through understanding-based stack-engineering," in Proc. VLSI Symp. Technol., Jun. 2012, pp. 159-160.
7. Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, C. W. Chen, W. P. Lin, W. H. Liu, Y. Y. Hsu, S. S. Sheu, P. C. Chiang, W. S. Chen, F. T. Chen, C. H. Lien, and M.-J. Tsai, "Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity," in Proc. IEEE IEDM, 2009, pp. 105-108.
8. S. Kim, K. P. Biju, M. Jo, S. Jung, J. Park, J. Lee, W. Lee, J. Shin, S. Park, and H. Hwang, "Effect of scaling WOx-based RRAMs on their resistive switching characteristics," IEEE Electron Device Lett., vol. 32, no. 5, pp. 671-673, May 2011.
9. X. A. Tran, B. Gao, J. F. Kang, L. Wu, Z. R. Wang, Z. Fang, K. L. Pey, Y. C. Yeo, A. Y. Du, B. Y. Nguyen, M. F. Li, and H. Y. Yu, "High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application," in Proc. VLSI Symp. Technol., 2011, pp. 44-45.
10. S. S. Sheu, K. H. Cheng, M. F. Chang, P. C. Chiang, W. P. Lin, H. Y. Lee, P. S. Chen, Y. S. Chen, T. Y. Wu, F. T. Chen, K. L. Su, M. J. Kao, and M. J. Tsai, "Fast-write resistive RAM (RRAM) for embedded applications," IEEE Des. Test Comput., vol. 28, no. 1, pp. 64-71, Jan./Feb. 2011.
11. N. Raghavan, W. Liu, X. Li, X. Wu, M. Bosman, and K. L. Pey, "Filamentation mechanism of resistive switching in fully silicided high-κ gate stacks," IEEE Electron Device Lett., vol. 32, no. 4, pp. 455-457, Apr. 2011.
12. X. Wu, K. L. Pey, N. Raghavan, W. H. Liu, X. Li, P. Bai, G. Zhang, and M. Bosman, "Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack," Nanotechnology, vol. 22, no. 45, p. 455 702, Nov. 2011.
13. H. B. Park, M. Cho, J. Park, S. W. Lee, C. S. Hwang, J. P. Kim, J. H. Lee, N. I. Lee, H. K. Kang, J. C. Lee, and S. J. Oh, "Comparison of HfO2 films grown by atomic layer deposition using HfCl4 and H2O or O3 as the oxidant," J. Appl. Phys., vol. 94, no. 5, pp. 3641-3647, Sep. 2003.
14. Y. H. Wu, J. R. Wu, C. Y. Hou, C. C. Lin, M. L. Wu, and L. L. Chen, "ZrTiOx-based resistive memory with MIS structure formed on Ge layer," IEEE Electron Device Lett., vol. 33, no. 3, pp. 435-437, Mar. 2012.