Filamentation mechanism of resistive switching in fully silicided High-κ gate stacks

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 455-457

  Raghavan, Nagarajan ^a   Liu, Wenhu ^a   Li, Xiang ^b   Wu, Xing ^a   Bosman, Michel ^c   Pey, Kin Leong ^a,d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

Author keywords

Metal filament; oxygen vacancy; resistive random access memory (RRAM); switching

Indexed keywords

FILAMENTATION; FULLY SILICIDED; GATE STACKS; MEMORY APPLICATIONS; METAL FILAMENTS; METAL GATE TRANSISTORS; PSEUDO RANDOM; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; SILICON CHANNEL; SOURCE/DRAIN SILICIDES; TEST STRUCTURE; TRANSISTOR STRUCTURE;

OXYGEN; OXYGEN VACANCIES; SILICIDES; SWITCHING; SWITCHING CIRCUITS; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 79953063302     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2107495     Document Type: Article

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