High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2011, Pages 44-45

  Tran, X A ^a   Gao, B ^a,b   Kang, J F ^b   Wu, L ^a   Wang, Z R ^a   Fang, Z ^a,c   Pey, K L ^a   Yeo, Y C ^d   Du, A Y ^e   Nguyen, B Y ^f   Li, M F ^g   Yu, H Y ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b PEKING UNIVERSITY   (China)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^e GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

^f PARC TECHNOLOGIQUE DES FONTAINES   (France)

^g FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

3D APPLICATION; BOTTOM ELECTRODES; CMOS COMPATIBLE; HIGH TEMPERATURE; OPERATING STABILITY; PULSE SWITCHING; RESISTANCE RATIO; RESISTIVE SWITCHING; SWITCHING PARAMETERS;

PLATINUM; PRECIOUS METALS; SILICON; SILICON WAFERS; THREE DIMENSIONAL;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 80052662353     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)

1. B. Lee, VLSI 2009, p28;
2. B. Gao, VLSI 2009, p30;
3. D. H. Kang, VLSI 2007, p96;
4. Y. Sasago, VLSI 2009, p24;
5. H. Cho, J. Ind. Eng. Chem, 13, p939 (2007);
6. B. Gao, EDL, p1326 (2009);
7. H.Yu, APL, 81,p376 (2002);
8. L. Zhang, EDL, 31, p966 (2010);
9. K. Tsunoda, IEDM 2007, p767;
10. W. C. Chien, EDL, 31, p.126(2010);
11. L. Zhang, EDL, 30, p.870(2009);
12. D. Lee, EDL, 26, p719(2005);
13. H. Schroeder, Microelectron. Eng, 84, p1982(2007);
14. W.-Y. Chang, APL, 92, p022110(2008);
15. C. Park, APL, 93, p042102(2008);
16. M.-H. Lin, J. Phys-D: Appl. Phys, 43, 295404(2010);
17. L. Qi, J. Semicond, 30, 042001(2009);
18. Ch. Walczyk, JAP, 105, p114103(2009);
19. L. Bin, Chinese. Phys. Lett., 21, p1087(2008).