Fast-write resistive RAM (RRAM) for embedded applications

IEEE Design and Test of Computers

Volumn 28, Issue 1, 2011, Pages 64-71

  Sheu, Shyh Shyuan ^a,c   Cheng, Kuo Hsing ^a   Chang, Meng Fan ^b   Chiang, Pei Chia ^c   Lin, Wen Pin ^c   Lee, Heng Yuan ^c   Chen, Pang Shiu ^c   Chen, Yu Sheng ^c   Wu, Tai Yuan ^c   Chen, Frederick T ^c   Su, Keng Li ^c   Kao, Ming Jer ^c   Tsai, Ming Jinn ^c  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

design and test; fast access speed; multilevel; nonvolatile memory; resistive RAM; RRAM

Indexed keywords

NONVOLATILE STORAGE;

DESIGN AND TESTS; EMBEDDED APPLICATION; FAST ACCESS SPEED; MICROCONTROLLER APPLICATIONS; MOBILE APPLICATIONS; MULTILEVELS; NON-VOLATILE MEMORY; NONVOLATILE MEMORY; POWER; RESISTIVE RRAM;

RRAM;

EID: 79951564013     PISSN: 07407475     EISSN: None     Source Type: Journal    
DOI: 10.1109/MDT.2010.96     Document Type: Article

References (3)

1. M.-F. Chang A 0.29V Embedded NAND-ROM in 90nm CMOS for Ultra-Low-Voltage Applications Proc. IEEE Int'l Solid-State Circuits Cont. (ISSCC 266 267 Proc. IEEE Int'l Solid-State Circuits Cont. (ISSCC 2010
2. M.-F. Chang S.-J. Shen A Process Variation Tolerant Embedded Split-Gate Flash Memory Using Pre-stable Current Sensing Scheme IEEE J. Solid-State Circuits 44 3 987 994 2009
3. H.-Y. Lee Low Power and High Speed Bipolar Switching with a Thin Reactive Ti Buffer Layer in Robust Hf0 2 Base RRAM Proc. Int'l Electron Devices Meeting 297 300 Proc. Int'l Electron Devices Meeting 2008