Nonvolatile gate effect in the PZT/AlGaN/GaN heterostructure

Journal of the European Ceramic Society

Volumn 27, Issue 13-15, 2007, Pages 4307-4311

  Stolichnov, Igor ^a   Malin, Lisa ^a   Muralt, Paul ^a   Setter, Nava ^a  

^a EPFL   (Switzerland)

Author keywords

Electrical conductivity; Electrical properties; Interfaces; Piezoelectric properties; PZT

Indexed keywords

CHEMICAL STABILITY; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; FIELD EFFECT SEMICONDUCTOR DEVICES; PIEZOELECTRICITY; POLARIZATION; THERMODYNAMIC STABILITY;

FERROELECTRIC GATE INTEGRATION; NON-VOLATILE MEMORIES; TWO-DIMENSIONAL ELECTRON GAS;

HETEROJUNCTIONS;

CHEMICAL STABILITY; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; FIELD EFFECT SEMICONDUCTOR DEVICES; HETEROJUNCTIONS; PIEZOELECTRICITY; POLARIZATION; THERMODYNAMIC STABILITY;

EID: 34347355424     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2007.02.150     Document Type: Article

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