Selectivity enhancement by hydrogen addition in selective area metal-organic vapor phase epitaxy of GaN and InGaN

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 6, 2010, Pages 1375-1378

  Shioda, Tomonari ^a,b   Sugiyama, Masakazu ^b   Shimogaki, Yukihiro ^b   Nakano, Yoshiaki ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

GaN; InGaN; Modeling; MOVPE; Nucleation; Photoluminescence; Structure

Indexed keywords

CRYSTAL SURFACES; GAN; HYDROGEN ADDITION; IN-PLANE; INGAN; LAYER COMPOSITION; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; PHOTOLUMINESCENCE PEAK; SELECTIVE AREAS; SELECTIVITY ENHANCEMENT; VAPOR PHASE; WAVELENGTH MODULATION;

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; NUCLEATION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 77954280988     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983606     Document Type: Article

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