The use of inductively coupled CF4/Ar plasma to improve the etch rate of ZrO2 thin films

Transactions on Electrical and Electronic Materials

Volumn 14, Issue 1, 2013, Pages 12-15

  Kim, Han Soo ^a   Woo, Jong Chang ^a   Joo, Young Hee ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

CF4; Etching; ICP; XPS; ZrO2

Indexed keywords

CHAMBER PRESSURE; ETCH RATES; ETCHED SURFACE; ETCHING CHARACTERISTICS; ETCHING PARAMETERS; GAS MIXING RATIO; ICP; INDUCTIVELY COUPLED PLASMA (ICP); INDUCTIVELY-COUPLED; OXIDE BONDS; VOLATILE REACTIONS; ZRO2;

ETCHING; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; PHOTOELECTRONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ZIRCONIUM ALLOYS;

EID: 84874353929     PISSN: 12297607     EISSN: 20927592     Source Type: Journal    
DOI: 10.4313/TEEM.2013.14.1.12     Document Type: Article

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