Dry etching mechanisms of ZrO2 thin films in BCl 3/Cl2/Ar plasma

Ferroelectrics

Volumn 384, Issue 1 PART 5, 2009, Pages 32-38

  Lee, Cheol In ^a   Kim, Gwan Ha ^b   Kim, Dong Pyo ^b   Woo, Jong Chang ^b   Kim, Chang Il ^b  

^a Ansan University   (South Korea)

^b Chung Ang University   (South Korea)

Author keywords

Etching; High k materials; Inductively coupled plasma; ZrO2

Indexed keywords

AR PLASMAS; CHEMICAL EFFECT; ETCH RATES; ETCHING BEHAVIOR; HIGH VOLATILITY; HIGH-K MATERIALS; INDUCTIVELY-COUPLED; METAL CHLORIDES; NON-VOLATILE; VOLATILE BORON; ZRO2 THIN FILMS;

BORON; BORON COMPOUNDS; CHEMICAL REACTIONS; CHLORINE COMPOUNDS; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; PHOTORESISTS; PLASMA ETCHING; SURFACE ANALYSIS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM; ZIRCONIUM ALLOYS;

REACTIVE ION ETCHING;

EID: 77749279861     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190902892725     Document Type: Conference Paper

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