Performance evaluation of SiC power MOSFETs for high-temperature applications

15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe

Volumn , Issue , 2012, Pages

  Chen, Zheng ^a   Yao, Yiying ^a   Danilovic, Milisav ^a   Boroyevich, Dushan ^a  

^a Virginia Polytechnic Institute and State University   (United States)

Author keywords

device characterization; gate oxide reliability; high temperature; SiC MOSFET

Indexed keywords

DEVICE CHARACTERISTICS; DEVICE CHARACTERIZATION; ELECTRICAL PERFORMANCE; ELEVATED TEMPERATURE; GATE OXIDE RELIABILITY; GATE SWITCHING; GATE VOLTAGES; HIGH TEMPERATURE; HIGH TEMPERATURE PERFORMANCE; JUNCTION TEMPERATURES; PERFORMANCE EVALUATION; POWER MOSFETS; SIC MOSFET; SIC MOSFETS; SWITCHING CHARACTERISTICS;

ELECTRONIC EQUIPMENT TESTING; GATES (TRANSISTOR); HIGH TEMPERATURE APPLICATIONS; MOTION CONTROL; POWER ELECTRONICS; RELIABILITY; SILICON CARBIDE;

MOSFET DEVICES;

EID: 84874226144     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EPEPEMC.2012.6397198     Document Type: Conference Paper

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