Growth of GaN layer and characterization of light-emitting diode using random-cone patterned sapphire substrate

Japanese Journal of Applied Physics

Volumn 48, Issue 12, 2009, Pages

  Okada, Narihito ^a   Murata, Tohru ^a   Tadatomo, Kazuyuki ^a   Chang, Huang C ^a,b   Watanabe, Kazuhiro ^a,b  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b ULVAC INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; CURRENT INJECTIONS; DISLOCATION DENSITIES; EXTERNAL QUANTUM EFFICIENCY; GAN LAYERS; GAN/SAPPHIRE; GROWTH MODES; GROWTH OF GAN; LATERAL OVERGROWTH; LIGHT-EXTRACTION EFFICIENCY; METAL-ORGANIC VAPOR PHASE EPITAXY; NATURAL LITHOGRAPHY; OUTPUT POWER; PATTERNED SAPPHIRE SUBSTRATE; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; SELECTIVE AREA GROWTH;

CRYSTAL GROWTH; EXTRACTION; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; PHASE INTERFACES; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 75149152826     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.122103     Document Type: Article

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