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Volumn 46, Issue 10, 2013, Pages

Transport and ionization of sputtered atoms in high-power impulse magnetron sputtering discharges

Author keywords

[No Author keywords available]

Indexed keywords

ARGON PRESSURE; COPPER TARGET; DEPOSITION PARAMETERS; DISCHARGE REGIMES; MAGNETIC FIELD STRENGTHS; MAGNETRON SYSTEM; NONSTATIONARY; PHENOMENOLOGICAL MODELS; REPETITION FREQUENCY; SPUTTERED ATOMS; TARGET MATERIALS; TARGET POWER DENSITY; TWO-ZONE MODEL; VOLTAGE PULSE;

EID: 84874046025     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/10/105203     Document Type: Article
Times cited : (20)

References (25)
  • 4
    • 77953877888 scopus 로고    scopus 로고
    • Magnetron configuration to enhance deposition rate in high power impulse magnetron sputtering
    • Ehiasarian A P and Vetushka A 2009 Magnetron configuration to enhance deposition rate in high power impulse magnetron sputtering Society of Vacuum Coaters 52nd Annual Technical Conf. Proc. (Santa Clara, CA, 9-14 May 2009) p 265
    • (2009) Society of Vacuum Coaters 52nd Annual Technical Conf. Proc. , pp. 265
    • Ehiasarian, A.P.1    Vetushka, A.2
  • 18
    • 0347684350 scopus 로고    scopus 로고
    • 10.1238/Physica.Regular.061a00595 1402-4896 013
    • Smirnov B M 2000 Phys. Scr. 61 595
    • (2000) Phys. Scr. , vol.61 , Issue.5 , pp. 595
    • Smirnov, B.M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.