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Volumn 555, Issue , 2013, Pages 311-314
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Reducing dislocations of thick AlGaN epilayer by combining low-temperature AlN nucleation layer on c-plane sapphire substrates
a
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Author keywords
AlN nucleation layer; Crystal quality; Metal organic chemical vapor deposition; Surface morphology
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Indexed keywords
ALGAN;
ALGAN EPILAYERS;
ALGAN LAYERS;
ALN;
ALN NUCLEATION LAYERS;
C-PLANE SAPPHIRE SUBSTRATES;
CRYSTAL QUALITIES;
HIGH TEMPERATURE;
HIGH-RESOLUTION X-RAY DIFFRACTION;
LOW TEMPERATURES;
LOW-PRESSURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITIONS;
NUCLEATION LAYERS;
PHOTOLUMINESCENCE MEASUREMENTS;
SAPPHIRE SUBSTRATES;
THREADING DISLOCATION DENSITIES;
ATOMIC FORCE MICROSCOPY;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTICAL PROPERTIES;
SAPPHIRE;
SUBSTRATES;
SUPERCONDUCTING FILMS;
SURFACE MORPHOLOGY;
SURFACE ROUGHNESS;
TEMPERATURE;
VAPORS;
X RAY DIFFRACTION;
NUCLEATION;
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EID: 84873885748
PISSN: 09258388
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jallcom.2012.12.018 Document Type: Article |
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Times cited : (13)
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References (20)
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