Wurtzite Alxga1-xN bulk crystals grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 322, Issue 1, 2011, Pages 23-26

  Novikov, S V ^a   Staddon, C R ^a   Powell, R E L ^a   Akimov, A V ^a   Luckert, F ^b   Edwards, P R ^b   Martin, R W ^b   Kent, A J ^a   Foxon, C T ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

A1. Substrates; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting IIIV materials

Indexed keywords

A1. SUBSTRATES; A3. MOLECULAR BEAM EPITAXY; ALGAN; B1. NITRIDES; BULK CRYSTAL GROWTH; BULK CRYSTALS; DEVICE STRUCTURES; EPITAXIAL TECHNIQUES; GAAS; GAAS SUBSTRATES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SEMI CONDUCTING III-V MATERIALS; THIN LAYERS; WURTZITE GAN; WURTZITES;

ALUMINUM; CRYSTALS; EPITAXIAL GROWTH; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; NITRIDES; SEMICONDUCTING GALLIUM; ZINC SULFIDE;

SUBSTRATES;

EID: 79954590433     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2011.03.016     Document Type: Article

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