Development of GaN wide bandgap technology for microwave power applications

IEEE Microwave Magazine

Volumn 3, Issue 1, 2002, Pages

  Nuttinck, S ^a   Gebara, E ^a   Laskar, J ^a   Harris, M ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA TECH RESEARCH INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; INTERMODULATION DISTORTION; PULSED LOAD-PULL SYSTEMS;

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ENERGY GAP; HIGH ELECTRON MOBILITY TRANSISTORS; INTERMODULATION MEASUREMENT; POWER ELECTRONICS; SCATTERING PARAMETERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SIGNAL DISTORTION; THERMOANALYSIS;

MICROWAVE DEVICES;

EID: 0036504492     PISSN: 15273342     EISSN: None     Source Type: Trade Journal    
DOI: 10.1109/6668.990699     Document Type: Article

References (21)

1. High breakdown GaN HEMT with overlapping gate structure
2. AlGaN/GaN dual-gate modulation-doped field-effect transistors
3. High-power microwave GaN/AlGaN HEMT's on semi-insulating silicon carbide substrates
4. High-power 10-GHz operation of AlGaN HFET's on insulating SiC
5. GaN microwave electronics
6. Study of self-heating effects in GaN HEMTs
7. Study of self-heating effects, temperature-dependent modeling, and pulsed load-pull measurements on GaN HEMTs
8. Influence of latice self-heating and hot-carrier transport on device performance
9. Pulsed device measurements and applications
10. A new method for determining the FET small-signal equivalent circuit
11. InSitu monitoring of GaN growth using interference effects
12. Metalorganic vapor phase epitaxial growth of a high quality GaN film using AlN buffer layer
13. AlGaN/GaN heterostructures on insulating AlGaN nucleation layers
14. Electron mobilities in gallium, indium, and aluminum nitrides
15. Grasping SOI floating-body effects
16. Subthreshold kinks in fully depleted SOI MOSFET's
17. Switch-off behavior of floating-body PD SOI MOSFET's
18. Floating-body kinks and dynamic effects in fully depleted SOI MOSFETs
19. Substrate-bias effect and source-drain breakdown characteristics in body-tied short-channel SOI MOSFET's
20. Measured microwave power performance of AlGaN/GaN MODFET