Reducing dislocations of Al-rich AlGaN by combining AlN buffer and AlN/Al0.8Ga0.2N superlattices

Journal of Crystal Growth

Volumn 310, Issue 6, 2008, Pages 1088-1092

  Peng, M Z ^a   Guo, L W ^a   Zhang, J ^a   Zhu, X L ^a   Yu, N S ^a   Yan, J F ^a   Liu, H H ^a   Jia, H Q ^a   Chen, H ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Cross sectional TEM; A3. AlxGa1 xN; A3. AlN AlGaN SLs; A3. MOCVD

Indexed keywords

DISLOCATIONS (CRYSTALS); PHOTOLUMINESCENCE; SUPERLATTICES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

THREADING DISLOCATIONS (TD);

ALUMINUM GALLIUM NITRIDE;

EID: 39649101278     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.01.006     Document Type: Article

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