Growth of thick AlGaN by mixed-source hydride vapor phase epitaxy

Applied Surface Science

Volumn 243, Issue 1-4, 2005, Pages 178-182

  Ahn, H S ^a   Kim, K H ^a   Yang, M ^a   Yi, J Y ^a   Lee, H J ^a   Cho, C R ^b   Cho, H K ^c   Kim, S W ^d   Narita, T ^e   Honda, Y ^e   Yamaguchi, M ^e   Sawaki, N ^e  

^a Korea Maritime University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

^c Dong A University   (South Korea)

^d Andong National University   (South Korea)

^e NAGOYA UNIVERSITY   (Japan)

Author keywords

AES; AlGaN; GaN; HVPE; Optical property; XRD

Indexed keywords

CHEMICAL REACTIONS; HYDRIDES; IMAGE PROCESSING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR LASERS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

BANDGAP; EPITAXIAL LAYERS; HYDRIDE VAPOR PHASE EPITAXY (HVPE); NITRIDE LAYERS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 20044389468     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.09.117     Document Type: Article

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