Effects of neutron-induced well potential perturbation for multiple cell upset of flip-flops in 65 nm

IEEE Transactions on Nuclear Science

Volumn 60, Issue 1, 2013, Pages 213-218

  Furuta, Jun ^a   Yamamoto, Ryosuke ^b   Kobayashi, Kazutoshi ^b   Onodera, Hidetoshi ^a  

^a KYOTO UNIVERSITY   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Multiple cell upset (MCU); neutron irradiation; parasitic bipolar effect; sensor; soft error

Indexed keywords

AREA-EFFICIENT; BIPOLAR EFFECTS; BULK CMOS; CELL-BASED; DURATION TIME; MEASUREMENT RESULTS; MULTIPLE CELL UPSET; SINGLE EVENT UPSETS; SOFT ERROR; SPATIAL RESOLUTION; VOLTAGE LEVELS;

CELLS; FLIP FLOP CIRCUITS; NEUTRON IRRADIATION; SENSORS;

CYTOLOGY;

EID: 84873731753     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2012.2229718     Document Type: Article

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