Characterizing SRAM single event upset in terms of single and multiple node charge collection

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 2943-2947

  Black, J D ^a   Ball Ii, D R ^a   Robinson, W H ^a   Fleetwood, D M ^a   Schrimpf, R D ^a   Reed, R A ^a   Black, D A ^a   Warren, K M ^a   Tipton, A D ^a   Dodd, P E ^b   Haddad, N F ^c   Xapsos, M A ^d   Kim, H S ^e   Friendlich, M ^e  

^a VANDERBILT UNIVERSITY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c BAE SYSTEMS   (United States)

^d NASA GODDARD SPACE FLIGHT CENTER   (United States)

^e MEI Technologies   (United States)

Author keywords

Heavy ion testing; Multiple cell upset; Single event modeling; SRAM

Indexed keywords

HEAVY IONS; IONS;

CHARGE COLLECTIONS; DIRECT CHARGES; HEAVY ION TESTING; INJECTION MECHANISMS; INJECTION MODES; MULTIPLE CELL UPSET; MULTIPLE NODES; SINGLE EVENT MODELING; SINGLE EVENT UPSETS; SRAM; TEST DATUM;

STATIC RANDOM ACCESS STORAGE;

EID: 58849091394     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2007231     Document Type: Conference Paper

References (15)

1. W. A. Kolasinski, J. B. Blake, J. K. Anthony, W. E. Price, and E. C. Smith, "Simluation of cosmic-ray induced soft errors and latchup in integrated-circuit computer memories," IEEE Trans. Nucl. Sci., vol. 26, pp. 5087-5091, Dec. 1979.
2. L. L. Sivo, J. C. Peden, M. Brettschneider, W. Price, and P. Pentecost, "Cosmic ray-induced soft errors in static MOS memory cells," IEEE Trans. Nucl. Sci., vol. 26, pp. 5042-5047, Dec. 1979.
3. S. E. Diehl, A. Ochoa, P. V. Dresserdorfer, R. Koga, and W. A. Kolasinski, "Error analysis and prevention of cosmic ion-induced soft errors in static CMOS RAMs," IEEE Trans. Nucl. Sci., vol. 29, pp. 2032-2039, Dec. 1982.
4. R. C. Martin, N. M. Ghoniem, Y. Song, and J. S. Cable, "The size effect of ion charge tracks on single event multiple bit upset," IEEE Trans. Nucl. Sci., vol. 34, pp. 1305-1309, Dec. 1987.
5. P. E. Dodd, F. W. Sexton, and P. S.Winokur, "Three-dimensional simulation of charge collection and multiple-bit upset in Si devices," IEEE Trans. Nucl. Sci., vol. 41, pp. 2005-2017, Dec. 1994.
6. D. M. Fleetwood and P. V. Dressendorfer, "A simple method to predict radiation and annealing biases that lead to worst-case CMOS static RAM postirradiation response," IEEE Trans. Nucl. Sci., vol. 34, pp. 1408-1413, Dec. 1987.
7. C. L. Axness, J. R. Schwank, P. S. Winokur, J. S. Browning, R. Koga, and D. M. Fleetwood, "Single event upset in irradiated 16 k CMOS SRAMs," IEEE Trans. Nucl. Sci., vol. 35, pp. 1602-1607, Dec. 1988.
8. P. E. Dodd, F. W. Sexton, G. L. Hash, M. R. Shaneyfelt, B. L. Draper, A. J. Farino, and R. S. Flores, "Impact of technology trends on SEU in CMOS SRAMs," IEEE Trans. Nucl. Sci., vol. 43, pp. 2797-2804, Dec. 1996.
9. G. C. Messenger, "Conductivity modulation effects in diffused resistors at very high dose rate levels," IEEE Trans. Nucl. Sci., vol. 26, pp. 4725-4729, Dec. 1979.
10. L. W. Massengill and S. E. Diehl-Nagle, "Transient radiation upset simulations of CMOS memory circuits," IEEE Trans. Nucl. Sci., vol. 31, pp. 1337-1343, Dec. 1984.
11. S. E. Kerns, L. W. Massengill, D. V.Kerns, M. L. Alles, T. W. Houston, H. Lu, and L. R. Hite, "Model for CMOS/SOI single-event vulnerability," IEEE Trans. Nucl. Sci., vol. 36, pp. 2305-2310, Dec. 1989.
12. L. W. Massengill, D. V. Kerns, S. E. Kerns, and M. L. Alles, "Singleevent charge enhancement in SOI devices," IEEE Electron Device Lett., vol. 11, pp. 98-99, Feb. 1990.
13. O. Musseau, J. L. Leray, V. Ferlet-Cavrois, Y. M. Coic, and B. Giffard, "SEU in SOI SRAMS - A static model," IEEE Trans. Nucl. Sci., vol. 41, pp. 607-612, Jun. 1994.
14. B. D. Olson, D. R. Ball, K. M.Warren, L. W. Massengill, N. F. Haddad, S. E. Doyle, and D. McMorrow, "Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2132-2136, Dec. 2005.
15. F. X. Ruckerbauer and G. Georgakos, "Soft error rates in 65 nm SRAMs - Analysis of new phenomena," in Proc. 13th IEEE Int. On-Line Testing Symp., Jul. 2007, pp. 203-204.