Comparison of multiple cell upset response of BULK and SOI 130nm technologies in the terrestrial environment

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 192-194

  Gasiot, Gilles ^a   Roche, Philippe ^a   Flatresse, Philippe ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BULK TECHNOLOGIES; RELIABILITY PHYSICS; TEST PATTERNS;

EXPERIMENTS;

EID: 51549113852     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558884     Document Type: Conference Paper

References (7)

1. Y. Tosaka et al., "Comprehensive study of soft errors in advanced CMOS circuits with 90/130 nm technology," Proceedings of the IEEE IEDM conf., Technical Digest, 2004.
2. N. Seifert et al., "Radiation-Induced Soft Error Rates of Advanced Cmos Bulk Devices," IRPS conf. San Jose, 2005.
3. G. Gasiot, D. Giot and P. Roche, "Multiple Cell Upsets as the Key Contribution to the Total SER of 65nm CMOS SRAMs and its Dependence on Well Engineering," presented at the 44th Annual International NSREC 2007, Honolulu, July 2007.
4. P. Roche, "Radiation effects in commercial BULK and SOI deep submicron technologies," Shortcourse at 2006 SOI conference, Niagara Falls, 2006.
5. JEDEC standard no JESD89, "Measurement and Reporting of Alpha Particles and Terrestrial Cosmic Ray-Induced Soft Errors in Semiconductor Devices," August 2001.
6. K. Osada, et al, "Cosmic-Ray Multi-Error Immunity for SRAM, Based on Analysis of the parasitic Bipolar effect", 2003 Symposium on VLSI Circuit Digest of Technical Papers.
7. D. Giot, G. Gasiot, P. Roche, "Multiple Bit Upset Analysis in 90nm SRAMs: Heavy Ions Testing and 3D Simulations," RADECS conference, Athens, Grece, September 2006.