Enhancement of resistive switching characteristics in Al2O 3-Based RRAM with embedded ruthenium nanocrystals

IEEE Electron Device Letters

Volumn 32, Issue 6, 2011, Pages 794-796

  Chen, Lin ^a   Gou, Hong Yan ^a   Sun, Qing Qing ^a   Zhou, Peng ^a   Lu, Hong Liang ^a   Wang, Peng Fei ^a   Ding, Shi Jin ^a   Zhang, Davidwei ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

A2O3; atomic layer deposition (ALD); conductive filament; nanocrystals; resistive switching

Indexed keywords

A2O3; CONDUCTIVE FILAMENT; EMBEDDED NANOCRYSTALS; LOW-RESISTANCE STATE; MEMORY DEVICE; NON-VOLATILE-MEMORY APPLICATIONS; POSSIBLE SOLUTIONS; RESISTANCE RATIO; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS;

ALUMINUM; ATOMIC LAYER DEPOSITION; RANDOM ACCESS STORAGE; RUTHENIUM; SWITCHING SYSTEMS;

NANOCRYSTALS;

EID: 79957589775     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2125774     Document Type: Article

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