Tailoring the photoluminescence characteristics of p-type GaSb: The role of surface chemical passivation

Chemical Physics Letters

Volumn 556, Issue , 2013, Pages 182-187

  Wang, Bo ^a   Wei, Zhipeng ^a   Li, Mei ^a   Liu, Guojun ^a   Zou, Yonggang ^a   Xing, Guozhong ^b   Tan, Thiam Teck ^b   Li, Sean ^b   Chu, Xueying ^a   Fang, Fang ^a   Fang, Xuan ^a   Li, Jinhua ^a   Wang, Xiaohua ^a   Ma, Xiaohui ^a  

^a CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ANTIMONIDE; LOW TEMPERATURES; P-TYPE; PASSIVATION EFFECT; PHOTOLUMINESCENCE CHARACTERISTICS; PHOTOLUMINESCENCE EMISSION; PL SPECTROSCOPY; RESIDUAL ACCEPTORS; ROOM TEMPERATURE; SURFACE CHEMICALS; SURFACE PASSIVATION; SYSTEMATIC STUDY; TEMPERATURE DEPENDENT;

OPTICAL PROPERTIES; PASSIVATION; PHOTOLUMINESCENCE; SULFUR;

GALLIUM ALLOYS;

EID: 84872364183     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cplett.2012.11.041     Document Type: Article

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