GaSb film growth by liquid phase epitaxy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 3-4, 2010, Pages 1203-1206

  Garcia Cruz M L ^a   Martinez Juarez J ^a,b   Lopez Salazar P ^a,b   Juarez Diaz G ^a,b  

^a BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

^b DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; CURRENT VOLTAGE CURVE; ELECTRICAL CHARACTERIZATION; GALLIUM ANTIMONIDE; GROWTH TIME; HIGH RESOLUTION X RAY DIFFRACTION; I - V CURVE; LOW TEMPERATURES; METAL CONTACTS; P-N JUNCTION; PL SPECTRA; ZINC-BLENDE;

CRYSTAL GROWTH; CRYSTAL STRUCTURE; GALLIUM ALLOYS; GERMANIUM; HOLOGRAPHIC INTERFEROMETRY; LIQUIDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION; ZINC;

FILM GROWTH;

EID: 77952580081     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982807     Document Type: Conference Paper

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