Improved photoluminescence from electrochemically passivated GaSb

Semiconductor Science and Technology

Volumn 12, Issue 4, 1997, Pages 413-418

  Salesse, A ^a   Alabedra, R ^a   Chen, Y ^b   Lakrimi, M ^b   Nicholas, R J ^b   Mason, N J ^b   Walker, P J ^b  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTROCHEMISTRY; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR SUPERLATTICES;

ELECTROCHEMICALLY PASSIVATED GALLIUM ANTIMONIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031122668     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/4/013     Document Type: Article

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