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Volumn 24, Issue 3, 2009, Pages
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The role of Ce dopant on the electrical properties of GaSb single crystals, measured by far-infrared Fourier transform spectroscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
CE DOPANTS;
COMPARATIVE STUDIES;
CZOCHRALSKI;
ELECTRICAL PROPERTIES;
FAR-INFRARED;
FOURIER TRANSFORM SPECTROSCOPIES;
HALL MEASUREMENTS;
KEY PARAMETERS;
P TYPES;
PLASMA FREQUENCIES;
CARRIER MOBILITY;
CERIUM;
CERIUM COMPOUNDS;
DOPING (ADDITIVES);
ELECTRIC PROPERTIES;
ELECTRONIC PROPERTIES;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
GALLIUM ALLOYS;
PLASMA WAVES;
SINGLE CRYSTALS;
SPECTRUM ANALYSIS;
FOURIER TRANSFORMS;
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EID: 64249102442
PISSN: 02681242
EISSN: 13616641
Source Type: Journal
DOI: 10.1088/0268-1242/24/3/035007 Document Type: Article |
Times cited : (7)
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References (40)
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