Study of short-and long-term effectiveness of ammonium sulfide as surface passivation for InAs/GaSb superlattices using X-ray photoelectron spectroscopy

Journal of Electronic Materials

Volumn 39, Issue 10, 2010, Pages 2210-2214

  Banerjee, Koushik ^a   Ghosh, Siddhartha ^a   Plis, Elena ^b   Krishna, Sanjay ^b  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

Ammonium sulfide; Indium arsenide gallium antimonide superlattice; Passivation stability; X ray photoelectron spectroscopy

Indexed keywords

AMMONIUM SULFIDE; ANTIMONIDES; CAPPING LAYER; ELECTRICAL PROPERTY; INAS/GASB; INAS/GASB SUPERLATTICES; NATIVE OXIDES; SULFIDIZATION; SUPER-LATTICE STRUCTURES; SURFACE PASSIVATION; SURFACE QUALITIES; SURFACE STUDY;

AMMONIUM COMPOUNDS; ELECTRONS; INDIUM; INDIUM ANTIMONIDES; INDIUM ARSENIDE; INDIUM SULFIDE; OPTOELECTRONIC DEVICES; PASSIVATION; PHOTOELECTRICITY; PHOTONS; SUPERLATTICES; X RAYS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 78149413740     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1298-x     Document Type: Article

References (22)

1. R. Tsu, L. Esaki, and B. A. Sai-Halasz, Appl. Phys. Lett. 30, 651(1977).
2. H. H. Wieder, J. Vac. Sci. Technol. 15, 1498(1978).
3. G. P. Schwartz, G. J. Gualtieri, J. E. Griffiths, C. D. Thurmond, and B. Schwartz, J. Electrochem. Soc. 127, 2488(1980).
4. D. Y. Petrovykh, M. J. Yang, and L. J. Whitman, Surf. Sci. 523, 231(2003).
5. M. Perotin, P. Coudray, L. Gouskov, H. Luquet, C. Linares, J. J. Bonnet, L. Soonckindt, and B. Lambert, J. Electron. Mater. 23, 7(1994).
6. H. Oigawa, J. F. Fan, Y. Nannichi, H. Sugahara, and M. Osofhima, Jpn. J. Appl. Phys. 30, L322 (1991).
7. P. S. Dutta, K. S. Sangunni, H. L. Bhat, and V. Kumar, Appl. Phys. Lett. 65, 1695(1994).
8. S. Basu and P. Barman, J. Vac. Sci. Technol. B 10, 1078(1992).
9. Z. Y. Liu, A. A. Gokhale, M. Mavrikakis, D. S. Saulys, and T. F. Kuech, J. Appl. Phys. 96, 4302(2004).
10. A. Gin, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, M. Razeghi, and M. Tidrow, Appl. Phys. Lett. 84, 2037(2004).
11. J. Hoffmann, T. Lehnert, D. Hoffmann, and H. Fouckhardt, Semicond. Sci. Tech. 24, 065008(2009).
12. S. Mou, J. V. Li, and S. L. Chuang, J. Appl. Phys. 102, 066103(2007).
13. K. Banerjee, S. Ghosh, S. Mallick, E. Plis, and S. Krishna, J. Electron. Mater. 38, 1944(2009).
14. S. Mallick, K. Banerjee, J. B. Rodriguez, S. Krishna, and S. Ghosh, Appl. Phys. Lett. 91, 241111(2007).
15. J. Li, S. Chuang, O. Sulima, and J. Cox, J. Appl. Phys. 97, 104506(2005).
16. M. R. Ravi, A. Dasgupta, and N. Dasgupta, IEEE Trans. Electron. Dev. 50, 532(2003).
17. P. S. Dutta, J. Langer, V. Bhagwat, and J. Juneja, Proc. SPIE 5783, 98(2005).
18. W. S. Hobson, F. Ren, U. Mohideen, R. E. Slusher, M. L. Schnoes, and S. J. Pearton, J. Vac. Sci. Technol. A 13, 642(1995).
19. NIST X-ray Photoelectron Spectroscopy Database, Version 3.5, http://srdata.nist.gov/xps/(2003).
20. X. Zhang, A. Z. Li, C. Lin, Y. L. Zheng, G. Y. Xu, M. Qi, and Y. G. Zhang, J. Cryst. Growth 251, 782(2003).
21. N. C. Norman, Periodicity and the s-and p-Block Elements (Oxford: Oxford University Press, 1997).
22. R. G. Pearson, Chemical Hardness-Applications from Molecules to Solids (Weinheim: Wiley-VCH, 1997).