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Volumn 102, Issue 1, 2013, Pages

Studying atomic scale structural and electronic properties of ion implanted silicon samples using cross-sectional scanning tunneling microscopy

(4) Studer, Philipp a Schofield, Steven R a Hirjibehedin, Cyrus F a Curson, Neil J a

a UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC RESOLUTION; ATOMIC SCALE; BISMUTH ATOM; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; DEPTH PROFILE; ELECTRONIC CHARACTERISTICS; IMPURITY ATOMS; ION IMPLANTED; ION-IMPLANTED SILICON; LOW DEFECT DENSITIES; ROOM TEMPERATURE; SCANNING TUNNELING SPECTROSCOPY; SILICON CRYSTAL; SILICON SAMPLES; SILICON SURFACES; STM STUDY; VOLATILE IMPURITIES;

ATOMS; BISMUTH; CRYSTAL IMPURITIES; ELECTRONIC PROPERTIES; ION IMPLANTATION; SCANNING TUNNELING MICROSCOPY; SILICON;

CRYSTAL ATOMIC STRUCTURE;

EID: 84872355227 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4772508 Document Type: Article

Times cited : (8)

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