Site-dependent ambipolar charge states induced by group v atoms in a silicon surface

ACS Nano

Volumn 6, Issue 12, 2012, Pages 10456-10462

  Studer, Philipp ^a   Brázdová, Veronika ^a   Schofield, Steven R ^a   Bowler, David R ^a   Hirjibehedin, Cyrus F ^a   Curson, Neil J ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

antimony; bismuth; DFT; dopants; silicon; STM

Indexed keywords

AMBIPOLAR; ANTIMONY ATOMS; BULK CRYSTALS; BULK ELECTRONIC STATE; CHARGE STATE; DENSITY FUNCTIONAL THEORIES (DFT); DFT; DONOR ATOMS; DOPANT ATOMS; ELECTRONIC DEVICE; HYDROGENIC DONOR; LOCAL ELECTRONIC STRUCTURES; NEGATIVE CHARGE; SCANNING TUNNELLING SPECTROSCOPY; SI (1 1 1); SILICON SURFACES; SPATIAL EXTENT; STM;

ANTIMONY; BISMUTH; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; SCANNING TUNNELING MICROSCOPY; SILICON;

ATOMS;

EID: 84871591651     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn3039484     Document Type: Article

References (31)

1. Fuechsle, M.; Miwa, J. A.; Mahapatra, S.; Ryu, H.; Lee, S.; Warschkow, O.; Hollenberg, L. C.; Klimeck, G.; Simmons, M. Y. A Single-Atom Transistor Nat. Nanotechnol. 2012, 7, 242-246
2. Koenraad, P. M.; Flatte, M. E. Single Dopants in Semiconductors Nat. Mater. 2011, 10, 91-100
3. Morton, J. J.; McCamey, D. R.; Eriksson, M. A.; Lyon, S. A. Embracing the Quantum Limit in Silicon Computing Nature 2011, 479, 345-53
4. Stoneham, A. M.; Fisher, A. J.; Greenland, P. T. Optically Driven Silicon-Based Quantum Gates with Potential for High-Temperature Operation J. Phys.: Condens. Matter 2003, 15, L447-L451
5. Morley, G. W.; Warner, M.; Stoneham, A. M.; Greenland, P. T.; van Tol, J.; Kay, C. W. M.; Aeppli, G. The Initialization and Manipulation of Quantum Information Stored in Silicon by Bismuth Dopants Nat. Mater. 2010, 9, 725-729
6. Benjamin, S. C. Quantum Computing without Local Control of Qubit-Qubit Interactions Phys. Rev. Lett. 2001, 88, 017904
7. de Sousa, R.; Lo, C. C.; Bokor, J. Spin-Dependent Scattering in a Silicon Transistor Phys. Rev. B 2009, 80, 045320-9
8. Rockett, A.; Johnson, D. D.; Khare, S. V.; Tuttle, B. R. Prediction of Dopant Ionization Energies in Silicon: The Importance of Strain Phys. Rev. B 2003, 68, 233208
9. Picraux, S. T.; Brown, W. L.; Gibson, W. M. Lattice Location by Channeling Angular Distributions: Bi Implanted in Si Phys. Rev. B 1972, 6, 1382
10. Pandey, K. C. New π-Bonded Chain Model for Si(111)-(2 × 1) Surface Phys. Rev. Lett. 1981, 47, 1913
11. Lequn, L.; Jixin, Y.; Lyding, J. W. Subsurface Dopant-Induced Features on the Si(100)2 × 1:H Surface: Fundamental Study and Applications IEEE Trans. Nanotechnol. 2002, 1, 176-183
12. Ebert, P. Defects in III-V Semiconductor Surfaces Appl. Phys. A: Mater 2002, 75, 101-112
13. Garleff, J. K.; Wenderoth, M.; Sauthoff, K.; Ulbrich, R. G.; Rohlfing, M. 2 × 1 Reconstructed Si(111) Surface: STM Experiments versus ab Initio Calculations Phys. Rev. B 2004, 70, 245424
14. Himpsel, F. J.; Hollinger, G.; Pollak, R. A. Determination of the Fermi-Level Pinning Position at Si(111) Surfaces Phys. Rev. B 1983, 28, 7014
15. Radny, M. W.; Smith, P. V.; Reusch, T. C. G.; Warschkow, O.; Marks, N. A.; Wilson, H. F.; Curson, N. J.; Schofield, S. R.; McKenzie, D. R.; Simmons, M. Y. Importance of Charging in Atomic Resolution Scanning Tunneling Microscopy: Study of a Single Phosphorus Atom in a Si(001) Surface Phys. Rev. B 2006, 74, 113311
16. Garleff, J.; Wijnheijmer, A.; v. d.Enden, C.; Koenraad, P. Bistable Behavior of Silicon Atoms in the (110) Surface of Gallium Arsenide Phys. Rev. B 2011, 84, 075459
17. Trappmann, T.; Suergers, C.; Loehneysen, v. Observation of P Donors on the Si(111) Surface by Scanning Tunneling Microscopy Europhys. Lett. 1997, 38, 177
18. Garleff, J. K.; Wenderoth, M.; Ulbrich, R. G.; Suergers, C.; Loehneysen, H. v. Evidence for One-Dimensional Electron Propagation on Si (111)-(2 × 1) from Coulomb Blockade Phys. Rev. B 2005, 72, 073406
19. Garleff, J. K.; Wenderoth, M.; Ulbrich, R. G.; Surgers, C.; v. Lohneysen, H.; Rohlfing, M. Identification of P Dopants at Nonequivalent Lattice Sites of the Si(111)-(2 × 1) Surface Phys. Rev. B 2007, 76, 125322-5
20. Pajot, B.; Stoneham, A. M. A Spectroscopic Investigation of the Lattice Distortion at Substitutional Sites for Groups V and VI Donors in Silicon J. Phys. C 1987, 20, 5241
21. Rohlfing, M.; Pollmann, J. Localization of Optically Excited States by Self-Trapping Phys. Rev. Lett. 2002, 88, 176801
22. Stroscio, J. A.; Feenstra, R. M.; Fein, A. P. Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling Microscopy Phys. Rev. Lett. 1986, 57, 2579-2582
23. Schock, M.; Surgers, C.; Von Lohneysen, H. Investigation of Single Boron Accepters at the Cleaved Si: B(111) Surface Phys. Rev. B 2000, 61, 7622-7627
24. Reining, L.; Del Sole, R. Screened Coulomb Interaction at Si(111)2 × 1 Phys. Rev. B 1991, 44, 12918
25. Reining, L.; Del Sole, R. Quasi One Dimensional Excitons and the Optical Properties of Si(111)2 × 1 Phys. Rev. Lett. 1991, 67, 3816
26. Rohlfing, M.; Louie, S. G. Excitons and Optical Spectrum of the Si(111)2 × 1 Surface Phys. Rev. Lett. 1999, 83, 856
27. Lee, D. H.; Gupta, J. A. Tunable Field-Control over the Binding Energy of Single Dopants by a Charged Vacancy in GaAs Science 2010, 330, 1807-1810
28. Hamers, R. J. Characterization of Localized Atomic Surface Defects by Tunneling Microscopy and Spectroscopy J. Vac. Sci. Technol. B 1988, 6, 1462-1467
29. Dingle, R.; Stormer, H. L.; Gossard, A. C.; Wiegmann, W. Electron Mobilities in Modulation-Doped Semiconductor Heterojunction Superlattices Appl. Phys. Lett. 1978, 33, 665-667
30. Kresse, G.; Furthmüller, J. Efficiency of Ab-Initio Total Energy Calculations for Metals and Semiconductors Using a Plane-Wave Basis Set Comput. Mater. Sci. 1996, 6, 15-50
31. Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized Gradient Approximation Made Simple Phys. Rev. Lett. 1996, 77, 3865-3868