SCOPUS 정보 검색 플랫폼

Volumn 405, Issue 1, 1998, Pages 38-45

Atomic structure of segregated boron on Si(001) surface; Scanning tunneling microscopy and cluster model calculation study

(2) Komeda, T a Nishioka, Y a

a Texas Instruments Japan Ltd (Japan)

Author keywords

Density functional calculations; Low index single crystal surfaces; Scanning tunneling microscopy; Scanning tunneling spectroscopies; Semiconducting surfaces; Surface segregation; Surface stress; Surface structure, morphology, roughness, and topography

Indexed keywords

APPROXIMATION THEORY; CRYSTAL ATOMIC STRUCTURE; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING BORON; SINGLE CRYSTALS; SURFACE ROUGHNESS; SYRINGES;

CLUSTER MODELS; DENSITY FUNCTIONAL THEORY; LOW INDEX SINGLE CRYSTAL SURFACES; SURFACE SEGREGATION;

SEMICONDUCTING SILICON;

EID: 0032071812 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)01094-7 Document Type: Article

Times cited : (6)

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