pin double-heterojunction thin-film solar cell p-layer assessment

Solar Energy Materials and Solar Cells

Volumn 93, Issue 8, 2009, Pages 1296-1308

  Spies, J A ^a   Schafer, R ^a   Wager, J F ^a   Hersh, P ^b   Platt, H A S ^b   Keszler, D A ^b   Schneider, G ^b   Kykyneshi, R ^b   Tate, J ^b   Liu, X ^c   Compaan, A D ^c   Shafarman, W N ^d  

^a Oregon State University   (United States)

^b OREGON STATE UNIVERSITY   (United States)

^c UNIVERSITY OF TOLEDO   (United States)

^d UNIVERSITY OF DELAWARE   (United States)

Author keywords

Barium copper tellurium fluoride; Cadmium telluride; Copper indium gallium diselenide; Heterojunction; Interface formation; Molybdenum diselenide; p Type semiconductor; Photovoltaics; Schottky barrier; Thin film solar cells; Wide band gap semiconductor

Indexed keywords

CADMIUM TELLURIDE; COPPER INDIUM GALLIUM DISELENIDE; INTERFACE FORMATION; MOLYBDENUM DISELENIDE; P-TYPE SEMICONDUCTOR; PHOTOVOLTAICS; SCHOTTKY BARRIER; THIN-FILM SOLAR CELLS; WIDE BAND-GAP SEMICONDUCTOR;

BARIUM; BARIUM COMPOUNDS; CADMIUM; CADMIUM ALLOYS; CADMIUM COMPOUNDS; CELL MEMBRANES; CONTACTS (FLUID MECHANICS); COPPER; ENERGY GAP; IONIZATION POTENTIAL; MOLYBDENUM; PHOTOVOLTAIC CELLS; PHOTOVOLTAIC EFFECTS; RADIATION DAMAGE; SCHOTTKY BARRIER DIODES; SELENIUM COMPOUNDS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING TELLURIUM; SOLAR CELLS; SOLAR ENERGY; TELLURIUM; THIN FILM DEVICES; WINDOWS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 67349227118     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.01.024     Document Type: Article

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42. Unless care is taken, signs (i.e., + and -), polarities (i.e., positive and negative) and directions (i.e., right-going and left-going) used in the context of the Schottky barrier-heterojunction theory formulation presented in Sections 2 and 3 can be somewhat confusing. Coherent use of this theory, as encapsulated in Eqs. (1)-(12), requires sketching energy band diagrams in a consistent manner; for a metal-semiconductor interface, the metal should be positioned to the left; for a heterojunction, semiconductor 1 should be positioned to the left. When these conventions are employed, all interfacial discontinuity barriers are defined with respect to the material positioned to the left (i.e., the metal in the case of Schottky barrier theory, and semiconductor 1 in the case of heterojunction theory), built-in potentials are defined with respect to the space charge region barrier of the material positioned to the right (i.e., the semiconductor in the case of Schottky barrier theory, and semiconductor 2 in the case of heterojunction theory), and dipoles are defined in the direction of negative (electron) charge transfer, with right-going corresponding to a positive quantity.
43. There are three ways to assess whether a metal-semiconductor interface constitutes an ohmic (low-barrier) or rectifying (high-barrier or Schottky barrier) contact. First, it can be discerned through examination of an energy band diagram by establishing whether majority carriers in the bulk semiconductor see an appreciable interfacial barrier, or, alternatively, a very small or completely absent interfacial barrier. Second, an ohmic contact will have either a negative majority carrier Schottky barrier height or a very small (less than ∼ 0.25 V) positive majority carrier Schottky barrier height. Third, for an ohmic contact, the majority carrier built-in potential will be either negative or positive but very small. Note that Eqs. (3) and (4) for the built-in potential are identical in magnitude and only differ in sign. This is a consequence of the fact that when a barrier is present for one carrier type, it is absent for the other carrier type.
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