Interfacial structure of a-plane ZnO grown on r-plane sapphire by pulsed laser deposition

Materials Letters

Volumn 94, Issue , 2013, Pages 165-168

  Peng, Chun Yen ^a   Wang, Wei Lin ^a   Ho, Yen Teng ^a   Tian, Jr Sheng ^a   Chang, Li ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Epitaxial growth; HRTEM; Interfaces; Nonpolar ZnO; RSM

Indexed keywords

A-PLANE; A-TYPE MISFIT DISLOCATIONS; C-AXIS DIRECTION; COHERENT INTERFACE; DISLOCATION PAIRS; HIGH GROWTH TEMPERATURES; HRTEM; INTERFACIAL STRUCTURES; LARGE LATTICE MISMATCH; MISFIT ACCOMMODATION; R-SAPPHIRE; RECIPROCAL SPACE MAPS; RSM; ZNO;

EPITAXIAL GROWTH; INTERFACES (MATERIALS); LASERS; PULSED LASER DEPOSITION; SAPPHIRE;

ZINC OXIDE;

EID: 84872348937     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2012.12.003     Document Type: Article

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