Investigation of initial growth and very thin (11 over(2, ̄) 0) ZnO films by cross-sectional and plan-view transmission electron microscopy

Applied Surface Science

Volumn 256, Issue 6, 2010, Pages 1849-1854

  Lee, Jae Wook ^a   Han, Seok Kyu ^b   Hong, Soon Ku ^b   Lee, Jeong Yong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Chungnam National University   (South Korea)

Author keywords

a Plane ZnO; Initial growth; Microstructure; Molecular beam epitaxy; Transmission electron microscopy; Volmer Weber

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ELECTRON DIFFRACTION; ELECTRONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLIC FILMS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDE;

BRIGHT FIELDS; CRITICAL THICKNESS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SELECTED AREA ELECTRON DIFFRACTION; STRUCTURAL DEFECT; SURFACE NORMALS; VOLMER-WEBER; VOLMER-WEBER GROWTH MODE;

II-VI SEMICONDUCTORS;

EID: 72549089928     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.10.018     Document Type: Article

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