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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 3, 2011, Pages

Effect of growth temperature on a-plane ZnO formation on r-plane sapphire

(7) Peng, Chun Yen a Tian, Jr Sheng a Wang, Wei Lin a Ho, Yen Teng a Chuang, Shu Chang a Chu, Ying Hao a Chang, Li a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; CRYSTALLINITIES; GROWTH MODES; HIGH PRESSURE; HIGH RESOLUTION X RAY DIFFRACTION; IN-SITU; LOW TEMPERATURES; PLANE SAPPHIRE; ZNO;

ATOMIC FORCE MICROSCOPY; DIFFRACTION; GROWTH RATE; GROWTH TEMPERATURE; HIGH PRESSURE EFFECTS; HIGH RESOLUTION ELECTRON MICROSCOPY; MORPHOLOGY; SAPPHIRE; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

FILM GROWTH;

EID: 79955132801 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.3549141 Document Type: Article

Times cited : (2)

References (18)

1
- 0018680513
- Structure parameters and polarity of the wurtzite type compounds SiC-2H and ZnO
- DOI 10.1016/0038-1098(79)90754-3
- H. Schulz and K. H. Thiemann, Solid State Commun. 0038-1098 32, 783 (1979). 10.1016/0038-1098(79)90754-3 (Pubitemid 10452608)
- (1979) Solid State Communications , vol.32 , Issue.9 , pp. 783-785
- Schulz Heinz¹ Thiemann, K.H.²

2
- 0038646291
- 0003-6951, 10.1063/1.1578694
- E. M. Kaidashev, Appl. Phys. Lett. 0003-6951 82, 3901 (2003). 10.1063/1.1578694
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3901
- Kaidashev, E.M.¹

3
- 0037672005
- 0021-4922, 10.1143/JJAP.42.2241
- H. Kato, M. Sano, K. Miyamoto, and T. Yao, Jpn. J. Appl. Phys., Part 1 0021-4922 42, 2241 (2003). 10.1143/JJAP.42.2241
- (2003) Jpn. J. Appl. Phys., Part 1 , vol.42 , pp. 2241
- Kato, H.¹ Sano, M.² Miyamoto, K.³ Yao, T.⁴

4
- 0034140030
- 3
- DOI 10.1016/S0022-0248(99)00614-4
- P. Fons, K. Iwata, S. Niki, A. Yamada, K. Matsubara, and M. Watanabe, J. Cryst. Growth 0022-0248 209, 532 (2000). 10.1016/S0022-0248(99)00614-4 (Pubitemid 30552884)
- (2000) Journal of Crystal Growth , vol.209 , Issue.2-3 , pp. 532-536
- Fons, P.¹ Iwata, K.² Niki, S.³ Yamada, A.⁴ Matsubara, K.⁵ Watanabe, M.⁶

5
- 0029336303
- 0002-7820, 10.1111/j.1151-2916.1995.tb08912.x
- V. Srikant, V. Sergo, and D. R. Clarke, J. Am. Ceram. Soc. 0002-7820 78, 1931 (1995). 10.1111/j.1151-2916.1995.tb08912.x
- (1995) J. Am. Ceram. Soc. , vol.78 , pp. 1931
- Srikant, V.¹ Sergo, V.² Clarke, D.R.³

6
- 49149085082
- 0003-6951, 10.1063/1.2965801
- G. Saraf, T. Siegrist, and Y. Lu, Appl. Phys. Lett. 0003-6951 93, 041903 (2008). 10.1063/1.2965801
- (2008) Appl. Phys. Lett. , vol.93 , pp. 041903
- Saraf, G.¹ Siegrist, T.² Lu, Y.³

7
- 72449144276
- 1359-6454, 10.1016/j.actamat.2009.10.026
- P. Pant, J. D. Budai, and J. Narayan, Acta Mater. 1359-6454 58, 1097 (2010). 10.1016/j.actamat.2009.10.026
- (2010) Acta Mater. , vol.58 , pp. 1097
- Pant, P.¹ Budai, J.D.² Narayan, J.³

8
- 54049112245
- 0021-8979, 10.1063/1.2996248
- J. M. Chauveau, P. Vennegues, M. Laugt, C. Deparis, J. Zuniga-Perez, and C. Morhain, J. Appl. Phys. 0021-8979 104, 073535 (2008). 10.1063/1.2996248
- (2008) J. Appl. Phys. , vol.104 , pp. 073535
- Chauveau, J.M.¹ Vennegues, P.² Laugt, M.³ Deparis, C.⁴ Zuniga-Perez, J.⁵ Morhain, C.⁶

9
- 36049004670
- Structural and optical properties of non-polar A-plane ZnO films grown on R-plane sapphire substrates by plasma-assisted molecular-beam epitaxy
- DOI 10.1016/j.jcrysgro.2007.09.025, PII S002202480700783X
- S. K. Han, J. Cryst. Growth 0022-0248 309, 121 (2007). 10.1016/j.jcrysgro.2007.09.025 (Pubitemid 350088825)
- (2007) Journal of Crystal Growth , vol.309 , Issue.2 , pp. 121-127
- Han, S.K.¹ Hong, S.K.² Lee, J.W.³ Lee, J.Y.⁴ Song, J.H.⁵ Nam, Y.S.⁶ Chang, S.K.⁷ Minegishi, T.⁸ Yao, T.⁹

10
- 77952663302
- 1071-1023, 10.1116/1.3130153
- S. K. Han, J. Vac. Sci. Technol. B 1071-1023 27, 1635 (2009). 10.1116/1.3130153
- (2009) J. Vac. Sci. Technol. B , vol.27 , pp. 1635
- Han, S.K.¹

11
- 38549125464
- Effect of misorientation angle of r-plane sapphire substrate on a-plane GaN grown by metalorganic vapor phase epitaxy
- DOI 10.1143/JJAP.47.119
- M. Araki, N. Mochimizo, K. Hoshino, and K. Tadatomo, Jpn. J. Appl. Phys. 0021-4922 47, 119 (2008). 10.1143/JJAP.47.119 (Pubitemid 351162353)
- (2008) Japanese Journal of Applied Physics , vol.47 , Issue.1 , pp. 119-123
- Araki, M.¹ Mochimizo, N.² Hoshino, K.³ Tadatomo, K.⁴

12
- 77949896837
- 0022-3727, 10.1088/0022-3727/43/14/145102
- X. Han, Y. Gao, J. Dai, C. Yu, Z. Wu, C. Chen, and G. Fang, J. Phys. D: Appl. Phys. 0022-3727 43, 145102 (2010). 10.1088/0022-3727/43/14/145102
- (2010) J. Phys. D: Appl. Phys. , vol.43 , pp. 145102
- Han, X.¹ Gao, Y.² Dai, J.³ Yu, C.⁴ Wu, Z.⁵ Chen, C.⁶ Fang, G.⁷

13
- 0016027151
- 0039-6028, 10.1016/0039-6028(74)90057-0
- D. Kohl, M. Henzler, and G. Heiland, Surf. Sci. 0039-6028 41, 403 (1974). 10.1016/0039-6028(74)90057-0
- (1974) Surf. Sci. , vol.41 , pp. 403
- Kohl, D.¹ Henzler, M.² Heiland, G.³

14
- 0017995881
- 0022-5355, 10.1116/1.569757
- W. Göpel, J. Vac. Sci. Technol. 0022-5355 15, 1298 (1978). 10.1116/1.569757
- (1978) J. Vac. Sci. Technol. , vol.15 , pp. 1298
- Göpel, W.¹

15
- 0000287378
- 0022-3654, 10.1021/j100405a027
- K. Lui, M. Vest, P. Berlowitz, S. Akhter, and H. H. Kung, J. Phys. Chem. 0022-3654 90, 3183 (1986). 10.1021/j100405a027
- (1986) J. Phys. Chem. , vol.90 , pp. 3183
- Lui, K.¹ Vest, M.² Berlowitz, P.³ Akhter, S.⁴ Kung, H.H.⁵

16
- 33646187525
- 1610-1634, 10.1002/pssc.200564656
- T. Moriyama and S. Fujita, Phys. Status Solidi C 1610-1634 3, 726 (2006). 10.1002/pssc.200564656
- (2006) Phys. Status Solidi C , vol.3 , pp. 726
- Moriyama, T.¹ Fujita, S.²

17
- 72549089928
- 0169-4332, 10.1016/j.apsusc.2009.10.018
- J. W. Lee, S. K. Han, S. K. Hong, and J. Y. Lee, Appl. Surf. Sci. 0169-4332 256, 1849 (2010). 10.1016/j.apsusc.2009.10.018
- (2010) Appl. Surf. Sci. , vol.256 , pp. 1849
- Lee, J.W.¹ Han, S.K.² Hong, S.K.³ Lee, J.Y.⁴

18
- 1242352448
- 0003-6951, 10.1063/1.1644054
- H. Wang, Appl. Phys. Lett. 0003-6951 84, 499 (2004). 10.1063/1.1644054
- (2004) Appl. Phys. Lett. , vol.84 , pp. 499
- Wang, H.¹

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