Non-volatile nano-floating gate memory with Pt-Fe2O3 composite nanoparticles and indium gallium zinc oxide channel

Journal of Nanoparticle Research

Volumn 15, Issue 2, 2013, Pages

  Hu, Quanli ^a   Lee, Seung Chang ^a   Baek, Yoon Jae ^a   Lee, Hyun Ho ^a   Kang, Chi Jung ^a   Kim, Hyun Mi ^b   Kim, Ki Bum ^b   Yoon, Tae Sik ^a  

^a Myong Ji University   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

Composite nanoparticles; Nano floating gate memory; One step synthesis; Oxide semiconductor

Indexed keywords

COMPOSITE MATERIALS; DIGITAL STORAGE; GALLIUM COMPOUNDS; HEMATITE; II-VI SEMICONDUCTORS; NANOPARTICLES; OXIDE SEMICONDUCTORS; PLATINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SHELLS (STRUCTURES); SOLS; SYNTHESIS (CHEMICAL); TEMPERATURE; THRESHOLD VOLTAGE; ZINC OXIDE;

COLLOIDAL NANOPARTICLES; COMPOSITE NANOPARTICLES; CURRENT VOLTAGE MEASUREMENT; INDIUM GALLIUM ZINC OXIDES; NANOFLOATING GATE MEMORY; NONVOLATILE MEMORY DEVICES; ONE STEP SYNTHESIS; THRESHOLD VOLTAGE SHIFTS;

PLATINUM;

GALLIUM; INDIUM; INDIUM GALLIUM ZINC OXIDE CHANNEL; ION CHANNEL; IRON OXIDE; NANOCOMPOSITE; NANOPARTICLE; PLATINUM; UNCLASSIFIED DRUG; ZINC OXIDE;

ARTICLE; CHANNEL GATING; CHEMICAL STRUCTURE; COLLOID; CONTROLLED STUDY; ELECTRIC POTENTIAL; FEASIBILITY STUDY; HYSTERESIS; LOW TEMPERATURE; NANODEVICE; NANOFABRICATION; OXIDATION; PARTICLE SIZE; PRIORITY JOURNAL;

EID: 84872268281     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-013-1435-6     Document Type: Article

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