Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels

Applied Physics Letters

Volumn 90, Issue 12, 2007, Pages

  Chen, Shih Ching ^a   Chang, Ting Chang ^b,c   Liu, Po Tsun ^d   Wu, Yung Chun ^a   Yeh, Ping Hung ^a   Weng, Chi Feng ^b   Sze, S M ^d   Chang, Chun Yen ^d   Lien, Chen Hsin ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; NANOWIRES; POLYCRYSTALLINE MATERIALS; THRESHOLD VOLTAGE;

NANOWIRE CHANNELS; OXIDE/NITRIDE/OXIDE (ONO) STACK GATE DIELECTRICS; SILICON OXIDE NITRIDE OXIDE SILICON (SONOS) MEMORY; SWITCH TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 33947587642     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2715443     Document Type: Article

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