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Current Applied Physics

Volumn 12, Issue SUPPL.4, 2012, Pages

Structural, electrical, and ellipsometric properties of nitrogen-annealed ZnO:Al films

(3) Hwang, Younghun a Kim, Hyungmin a Um, Youngho a

a University of Ulsan (South Korea)

Author keywords

Burstein Moss effect; Nitrogen treatment; Spectroscopic ellipsometry; Tauc Lorentz dielectric model; ZnO:Al film

Indexed keywords

AL-DOPED ZNO; BAND GAP ENERGY; BURSTEIN-MOSS EFFECTS; CRYSTALLINE STRUCTURE; DIELECTRIC FUNCTIONS; DIELECTRIC MODELS; ELECTRICAL AND OPTICAL PROPERTIES; FUNDAMENTAL ABSORPTION EDGE; NITROGEN ANNEALING; NITROGEN TREATMENT; OPTICAL CHARACTERISTICS; PREFERRED ORIENTATIONS; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; VISIBLE RANGE; ZNO:AL FILMS;

ANNEALING; ELECTRIC PROPERTIES; MAGNETRON SPUTTERING; METALLIC FILMS; NITROGEN; OPTICAL CONSTANTS; OPTICAL PROPERTIES; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; TRANSPORT PROPERTIES; X RAY DIFFRACTION; ZINC OXIDE;

ALUMINUM;

EID: 84871926207 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2012.05.021 Document Type: Conference Paper

Times cited : (12)

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