Characterization of integrated planar photonic crystal circuits fabricated by a CMOS foundry

Journal of Lightwave Technology

Volumn 31, Issue 2, 2013, Pages 239-248

  Schelew, Ellen ^a   Rieger, Georg W ^a   Young, Jeff F ^a  

^a UNIVERSITY OF BRITISH COLUMBIA   (Canada)

Author keywords

Gratings; nanophotonics; optical resonators; photonic crystals; photonic integrated circuits; silicon on insulator technology

Indexed keywords

CHANNEL WAVEGUIDE; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DEVICE PARAMETERS; FINITE DIFFERENCE TIME DOMAIN SIMULATIONS; GRATING COUPLERS; HOLE DEFECT; HOLE DIAMETER; INCIDENT RADIATION; INPUT/OUTPUT; KEY ELEMENTS; P-POLARIZED; PHOTONIC INTEGRATED CIRCUITS; PLANAR PHOTONIC CRYSTAL; POST-FABRICATION; PROCESSING TECHNIQUE; S-POLARIZED; SIDE WALLS; SILICON DEVICES; SILICON ON INSULATOR; SILICON SLABS; TE MODE; TM MODES; TRANSMISSION EFFICIENCY; TRANSVERSE ELECTRICS; TRANSVERSE MAGNETIC MODES; TUNING RANGES; UNIFORM ARRAY;

ANGLE MEASUREMENT; CMOS INTEGRATED CIRCUITS; DIFFRACTION GRATINGS; FABRICATION; FOUNDRIES; NANOPHOTONICS; OPTICAL RESONATORS; PHOTORESISTS; SILICON ON INSULATOR TECHNOLOGY;

PHOTONIC CRYSTALS;

EID: 84871798202     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2012.2228466     Document Type: Article

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