P-InGaN/AlGaN electron blocking layer for InGaN/GaN blue light-emitting diodes

Applied Physics Letters

Volumn 101, Issue 26, 2012, Pages

  Liu, Zhiqiang ^a   Ma, Jun ^a   Yi, Xiaoyan ^a   Guo, Enqing ^a   Wang, Liancheng ^a   Wang, Junxi ^a   Lu, Na ^b   Li, Jinmin ^a   Ferguson, Ian ^b   Melton, Andrew ^b  

^a INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^b University of North Carolina at Charlotte   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE LIGHT-EMITTING; DEVICE PROPERTIES; ELECTRON BLOCKING LAYER; INGAN/GAN; INSERTION LAYERS; OPTICAL PERFORMANCE; P-INGAN; P-TYPE DOPING; RATE-EQUATION MODELS;

PHYSICAL PROPERTIES; PHYSICS;

LIGHT EMITTING DIODES;

EID: 84871780924     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773187     Document Type: Article

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