Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer

Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

  Lu, Taiping ^a   Li, Shuti ^a   Liu, Chao ^a   Zhang, Kang ^a   Xu, Yiqin ^a   Tong, Jinhui ^a   Wu, Lejuan ^a   Wang, Hailong ^a   Yang, Xiaodong ^a   Yin, Yian ^a   Xiao, Guowei ^b   Zhou, Yugang ^b  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

^b APT Electronics Ltd ^*  (China)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; ELECTRON BLOCKING LAYER; EMISSION ENERGIES; HOLE INJECTION; LIGHT OUTPUT POWER; OPTICAL CHARACTERISTICS; P-INGAN; P-TYPE;

EFFICIENCY; ELECTRON INJECTION; GALLIUM NITRIDE; LIGHT EMISSION;

LIGHT EMITTING DIODES;

EID: 84859795642     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3700722     Document Type: Article

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