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Volumn 101, Issue 25, 2012, Pages

Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STEP EDGES; DILUTED NITRIDES; GROWTH CONDITIONS; GROWTH PARAMETERS; NITROGEN INCORPORATION; SUBSTITUTIONAL NITROGEN;

EID: 84871727585     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4772785     Document Type: Article
Times cited : (14)

References (25)
  • 1
    • 0036685526 scopus 로고    scopus 로고
    • 10.1088/0268-1242/17/8/317
    • J. S. Harris, Semicond. Sci. Technol. 17, 880 (2002). 10.1088/0268-1242/17/8/317
    • (2002) Semicond. Sci. Technol. , vol.17 , pp. 880
    • Harris, J.S.1
  • 10
    • 14344273948 scopus 로고    scopus 로고
    • 10.1103/PhysRevLett.86.1789
    • S. B. Zhang and S.-H. Wei, Phys. Rev. Lett. 86, 1789 (2001). 10.1103/PhysRevLett.86.1789
    • (2001) Phys. Rev. Lett. , vol.86 , pp. 1789
    • Zhang, S.B.1    Wei, S.-H.2
  • 18
    • 84871796019 scopus 로고    scopus 로고
    • in, edited by P. Bhattacharya, R. Fornari, and H. Kamimura (Elsevier, Amsterdam)
    • R. Fornari, in Comprehensive Semiconductor Science and Technology, edited by, P. Bhattacharya, R. Fornari, and, H. Kamimura, (Elsevier, Amsterdam, 2011), pp. 1-35.
    • (2011) Comprehensive Semiconductor Science and Technology , pp. 1-35
    • Fornari, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.