{1 1 1} Quantum wells of dilute nitrides grown on GaAs by molecular beam epitaxy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 23, Issue 3-4 SPEC. ISS., 2004, Pages 352-355

  Arnoult, A ^a   Gonzalez Posada, F ^a   Blanc, S ^a   Bardinal, V ^a   Fontaine, C ^a  

^a LAAS CNRS   (France)

Author keywords

Dilute nitrides; III V semiconductors; Molecular beam epitaxy; Photoluminescence; SIMS

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; DESORPTION; GALLIUM COMPOUNDS; HEATING; IMPURITIES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; SOLDERING; SURFACE ROUGHNESS;

DILUTE NITRIDES; III-V SEMICONDUCTORS; ORIENTATION EFFECTS; THERMAL ANNEALING;

NITRIDES;

EID: 3142737231     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.01.019     Document Type: Conference Paper

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