Difference of N concentrations in GaPN layers simultaneously grown on Si and GaP substrates

Journal of Crystal Growth

Volumn 295, Issue 1, 2006, Pages 12-15

  Utsumi, Atsushi ^a   Furukawa, Yuzo ^a   Yonezu, Hiroo ^a   Wakahara, Akihiro ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; NITROGEN; PHOTOLUMINESCENCE; SILICON; X RAY DIFFRACTION ANALYSIS;

DEEP-LEVEL EMISSION; GAPN LAYERS; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33748484231     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.07.001     Document Type: Article

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