Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain

Applied Physics Letters

Volumn 100, Issue 11, 2012, Pages

  Robert, C ^a,b   Perrin, M ^a,b   Cornet, C ^a,b   Even, J ^a,b   Jancu, J M ^a,b  

^a UNIVERSITÉ EUROPÉENNE DE BRETAGNE   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE AREA; ATOMISTIC CALCULATIONS; BAND ALIGNMENTS; BAND STRUCTURE CALCULATION; BIAXIAL STRAIN EFFECT; EXPERIMENTAL DATA; N INCORPORATION; SILICON SUBSTRATES; TIGHT BINDING; TIGHT BINDING MODEL; TRANSITION ENERGY;

BAND STRUCTURE; BINDING ENERGY; OPTICAL GAIN; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS;

GALLIUM;

EID: 84859954403     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3694028     Document Type: Article

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