Effect of Sn content on the electrical and optical properties of Ge1-xSnxSe3 glasses

Vacuum

Volumn 57, Issue 3, 2000, Pages 307-317

  Fadel, M ^a   Sedeek, K ^b   Hegab, N A ^a  

^a Faculty of Education   (Egypt)

^b Al Azhar University   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPOSITION EFFECTS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; THRESHOLD VOLTAGE;

GERMANIUM TIN SELENIDE; OPTICAL GAP; PRE-EXPONENTIAL FACTOR;

SEMICONDUCTING GLASS;

EID: 0033686166     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(00)00144-5     Document Type: Article

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