Negative-differential-resistance effects in TlInTe2 ternary semiconductor

Journal of Alloys and Compounds

Volumn 484, Issue 1-2, 2009, Pages 561-566

  Al Ghamdi, A A ^a   Nagat, A T ^a   Bahabri, F S ^a   Al orainy, R H ^a   Al harbi, S R ^a   Al Hazmi, F S ^a  

^a KING ABDULAZIZ UNIVERSITY   (Saudi Arabia)

Author keywords

Crystal grow; Electrical transport; Semiconductor

Indexed keywords

BRIDGMAN TECHNIQUES; DITELLURIDE; ELECTRICAL TRANSPORT; ELECTRO-THERMAL MODEL; HIGH EFFICIENCY; LIGHT INTENSITY; LOW COSTS; LOW CURRENT DENSITY; NEGATIVE DIFFERENTIAL RESISTANCES; OHMIC REGION; SAMPLE HOLDERS; SAMPLE THICKNESS; SEMICONDUCTOR; SWITCHING EFFECT; SWITCHING PARAMETERS; SWITCHING PHENOMENON; TERNARY SEMICONDUCTORS;

NEGATIVE RESISTANCE; OXIDE MINERALS; QUARTZ; SINGLE CRYSTALS; THALLIUM;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 69949098165     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.04.142     Document Type: Article

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