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Volumn 518, Issue 20, 2010, Pages 5656-5658
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Influence of chalcogenide glasses electro physical parameters on threshold voltage for phase-change memory
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Author keywords
Amorphous semiconductors; Phase change memory devices
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Indexed keywords
CHALCOGENIDE GLASS;
DELAY TIME;
EMISSION MODEL;
EXPERIMENTAL DATA;
INITIAL STAGES;
PHASE-CHANGE MEMORY DEVICES;
PHYSICAL PARAMETERS;
SETTING PARAMETERS;
TEMPERATURE DEPENDENCE;
AMORPHOUS SEMICONDUCTORS;
ELECTRIC BREAKDOWN;
THRESHOLD VOLTAGE;
PHASE CHANGE MEMORY;
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EID: 77955389013
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2009.10.033 Document Type: Conference Paper |
Times cited : (8)
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References (15)
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