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Volumn 518, Issue 20, 2010, Pages 5656-5658

Influence of chalcogenide glasses electro physical parameters on threshold voltage for phase-change memory

Author keywords

Amorphous semiconductors; Phase change memory devices

Indexed keywords

CHALCOGENIDE GLASS; DELAY TIME; EMISSION MODEL; EXPERIMENTAL DATA; INITIAL STAGES; PHASE-CHANGE MEMORY DEVICES; PHYSICAL PARAMETERS; SETTING PARAMETERS; TEMPERATURE DEPENDENCE;

EID: 77955389013     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.033     Document Type: Conference Paper
Times cited : (8)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.