Electrical switching in the bulk metal chalcogenide glassy semiconductor Cu10(AsSe1.4I0.2)90

Semiconductor Science and Technology

Volumn 24, Issue 8, 2009, Pages

  Slankamenac, M P ^a   Lukic S R ^a   Zivanov M B ^a  

^a UNIVERSITY OF NOVI SAD   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT TEMPERATURES; ARRHENIUS; BULK METALS; ELECTRICAL RESISTANCES; ELECTRICAL SWITCHING; ELECTRO-THERMAL MODEL; HIGH-FIELD; LOW-FIELD REGION; OHMIC BEHAVIOUR; PHYSICAL MODEL; SINGLE ACTIVATION ENERGY; SPACE CHARGE LIMITED CONDUCTION; STATIC AND DYNAMIC; SWITCHING PHENOMENON; TEMPERATURE RANGE;

ACTIVATION ENERGY; THRESHOLD VOLTAGE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 68949149003     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/8/085021     Document Type: Article

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