Memory switching of germanium tellurium amorphous semiconductor

Applied Surface Science

Volumn 253, Issue 4, 2006, Pages 2059-2065

  Abdel Aziz, M M ^a  

^a Ain Shams University   (Egypt)

Author keywords

Amorphous semiconductor; dc conductivity; Switching phenomena

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; ELECTRIC CONDUCTIVITY; MATHEMATICAL MODELS; SWITCHING;

SWITCHING PHENOMENA; THERMAL MODEL; THRESHOLD RESISTANCE;

SEMICONDUCTOR DEVICES;

EID: 33751310552     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.03.094     Document Type: Article

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