Measurement of geometrically necessary dislocation density with high resolution electron backscatter diffraction: Effects of detector binning and step size

Ultramicroscopy

Volumn 125, Issue , 2013, Pages 1-9

  Jiang, J ^a   Britton, T B ^a   Wilkinson, A J ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

Camera binning; CCD; EBSD; Geometrically necessary dislocation (GND) density; Polycrystal copper; Step size

Indexed keywords

CROSS-CORRELATION ANALYSIS; DATA QUALITY; DEFORMED SAMPLES; DISLOCATION DENSITIES; EBSD; ELECTRON BACK SCATTER DIFFRACTION; FULL RESOLUTIONS; GEOMETRICALLY NECESSARY DISLOCATIONS; HIGH QUALITY; HIGH RESOLUTION ELECTRON BACKSCATTER DIFFRACTIONS; HIGH SPATIAL RESOLUTION; LOWER BOUNDS; MIS-ORIENTATION; NOISE FLOOR; POLYCRYSTAL COPPER; STATISTICALLY STORED DISLOCATIONS; STEP SIZE; WILKINSON;

CHARGE COUPLED DEVICES; ELECTRON DIFFRACTION; GEOMETRY;

SINGLE CRYSTALS;

SILICON;

ACCURACY; ANALYTIC METHOD; ARTICLE; CALCULATION; CAMERA; CHEMICAL ANALYSIS; CONTROLLED STUDY; DIFFRACTION; DIPOLE; GEOMETRICALLY NECESSARY DISLOCATION DENSITY; HIGH RESOLUTION ELECTRON BACKSCATTER DIFFRACTION; MEASUREMENT; PREDICTION; RELIABILITY; SIGNAL NOISE RATIO;

EID: 84871391115     PISSN: 03043991     EISSN: 18792723     Source Type: Journal    
DOI: 10.1016/j.ultramic.2012.11.003     Document Type: Article

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